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NCEP85T12 Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCEP85T12 Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
2 / 7 page Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 2 NCEP85T12 Pb Free Product http://www.ncepower.com Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJC 0.94 /W ℃ Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 85 - V Zero Gate Voltage Drain Current IDSS VDS=85V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2.5 - 4.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=60A - 4.5 5.3 mΩ Forward Transconductance gFS VDS=10V,ID=60A 40 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 5500 - PF Output Capacitance Coss - 830 - PF Reverse Transfer Capacitance Crss VDS=40V,VGS=0V, F=1.0MHz - 57 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 13.5 - nS Turn-on Rise Time tr - 12.5 - nS Turn-Off Delay Time td(off) - 38 - nS Turn-Off Fall Time tf VDD=40V,ID=60A VGS=10V,RG=4.7Ω - 13.5 - nS Total Gate Charge Qg - 55 nC Gate-Source Charge Qgs - 21 nC Gate-Drain Charge Qgd VDS=40V,ID=60A, VGS=10V - 9 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=120A - 1.2 V Diode Forward Current (Note 2) IS - - 120 A Reverse Recovery Time trr - 74 nS Reverse Recovery Charge Qrr TJ = 25°C, IF = IS di/dt = 100A/μs (Note3) - 176 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25 ,V ℃ DD=42.5V,VG=10V,L=0.5mH,Rg=25Ω |
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