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AUIRFS4115-7P Datasheet(PDF) 2 Page - Infineon Technologies AG |
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AUIRFS4115-7P Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 10 page AUIRFS4115-7P 2 2015-12-4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.115mH, RG = 25, IAS = 63A, VGS =10V. Part not recommended for use above this value. ISD 63A, di/dt 2510A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C Reference to 25°C, ID = 3.5mA RDS(on) Static Drain-to-Source On-Resistance ––– 10 11.8 m VGS = 10V, ID = 63A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA gfs Forward Trans conductance 93 ––– ––– S VDS = 50V, ID = 63A RG Gate Resistance ––– 2.1 ––– IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 150V, VGS = 0V ––– ––– 250 VDS = 150V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Total Gate Charge ––– 73 110 nC ID = 63A Qgs Gate-to-Source Charge ––– 28 ––– VDS = 75V Qgd Gate-to-Drain Charge ––– 28 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 45 ––– td(on) Turn-On Delay Time ––– 18 ––– ns VDD = 98V tr Rise Time ––– 50 ––– ID = 63A td(off) Turn-Off Delay Time ––– 37 ––– RG= 2.1 tf Fall Time ––– 23 ––– VGS = 10V Ciss Input Capacitance ––– 5320 ––– pF VGS = 0V Coss Output Capacitance ––– 490 ––– VDS = 50V Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 450 ––– VGS = 0V, VDS = 0V to 120V Coss eff.(TR) Effective Output Capacitance (Time Related) ––– 520 ––– VGS = 0V, VDS = 0V to 120V Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 104 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 420 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 63A,VGS = 0V trr Reverse Recovery Time ––– 82 ––– ns TJ = 25°C VDD = 130V ––– 99 ––– TJ = 125°C IF = 63A, Qrr Reverse Recovery Charge ––– 271 ––– nC TJ = 25°C di/dt = 100A/µs ––– 385 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 6.0 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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