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MCR8DCNT4 Datasheet(PDF) 4 Page - Kersemi Electronic Co., Ltd. |
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MCR8DCNT4 Datasheet(HTML) 4 Page - Kersemi Electronic Co., Ltd. |
4 / 5 page MCR8DCM, MCR8DCN 4 65 125 −40 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) 1000 10 K 10 RGK, GATE−CATHODE RESISTANCE (OHMS) 1000 100 10 1.0 −25 5.0 20 50 95 100 VD = 800 V TJ = 125°C −10 35 80 110 65 125 −40 10 1.0 −25 5.0 20 50 95 100 −10 35 80 110 100 Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature −25 20 −40 TJ, JUNCTION TEMPERATURE (°C) 100 10 TJ, JUNCTION TEMPERATURE (°C) −25 65 −40 0.2 20 5.0 50 110 65 5.0 125 35 50 80 1.0 0.9 −10 35 95 −10 95 80 125 0.3 0.4 0.5 0.6 0.7 0.8 110 Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature Figure 9. Exponential Static dv/dt versus Gate−Cathode Resistance www.kersemi.com |
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