1

MCR8DSM, MCR8DSN

Preferred Device

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control; process control; temperature, light

and speed control.

Features

Surface Mount Lead Form − Case 369C

Miniature Plastic Package − Straight Leads − Case 369

Machine Model, C

u 400 V

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage

50 to 60 Hz, Gate Open)

MCR8DSM

MCR8DSN

600

800

V

On−State RMS Current

(180

8.0

A

Average On−State Current

(180

5.1

A

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz,

90

A

Circuit Fusing Consideration

(t = 8.3 msec)

34

Forward Peak Gate Power

(Pulse Width

5.0

W

Forward Average Gate Power

0.5

W

Forward Peak Gate Current

(Pulse Width

2.0

A

Operating Junction Temperature Range

− 40 to 110

°C

Storage Temperature Range

− 40 to 150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

apply for negative gate voltage; positive gate voltage shall not be applied

concurrent with negative potential on the anode. Blocking voltages shall not

be tested with a constant current source such that the voltage ratings of the

device are exceeded.

SCRs

8 AMPERES RMS

600 − 800 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

K

G

A

PIN ASSIGNMENT

1

2

3

Anode

Gate

Cathode

4

Anode

DPAK

CASE 369C

STYLE 4

MARKING

DIAGRAM

Y

= Year

WW

= Work Week

x

= M or N

1 2

3

4

YWW

CR

8DSx

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

www.kersemi.com