PTF210301E datasheet(4/8 Pages) INFINEON

Part #	PTF210301E

Description	LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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Data Sheet

4

2003-12-22

PTF210301

Broadband Circuit Impedance Data

IM3, Drain Efficiency and Gain

vs. Supply Voltage

-45

-40

-35

-30

-25

-20

-15

-10

23

24

25

26

27

28

29

30

31

32

33

Supply Voltage (V)

10

15

20

25

30

35

40

45

Gain

Efficiency

IM3 Up

IDQ = 380 mA, f = 2140 MHz, Tone Spacing = 1 MHz,

Output Power (PEP) = 44.75 dBm

0.95

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

-20

20

60

100

Case Temperature (°C)

0.20

0.77

1.33

1.90

2.47

3.03

Gate-Source Voltage vs. Case Temperature

Voltage normalized to typical gate voltage.

Typical Performance (cont.)

Z Source

Z Load

G

S

D

Frequency

Z Source

Ω

Z Load

Ω

MHz

R

jX

R

jX

2070

12.6

–4.3

5.5

–5.7

2110

13.5

–3.8

5.1

–5.4

2140

14.2

–3.6

4.8

–4.9

2170

15.0

–3.6

4.4

–4.6

2210

16.1

–3.7

4.0

–4.3

0.1

3

0.2

2210 MHz

2070 MHz

2210 MHz

2070 MHz

Z Load

Z Source

Z0 = 50 Ω

Series show current.

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