PTF211802A datasheet(2/8 Pages) INFINEON

Part #	PTF211802A

Description	LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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Data Sheet

2

2004-02-13

PTF211802

Broadband Performance

5

10

15

20

25

30

35

40

2080

2100

2120

2140

2160

2180

2200

Frequency (MHz)

-35

-30

-25

-20

-15

-10

-5

0

Gain

Efficiency

Return Loss

VDD = 28 V, IDQ = 2.0 A, POUT = 38 W

Power Sweep, under Pulsed Conditions

VDD = 28 V, IDQ = 2.0 A, f = 2140 MHz,

pulse period = 1 ms, 0.8% duty cycle

46

48

50

52

54

56

58

30

32

34

36

38

40

42

44

Input Power (dBm)

P-1dB = 52.8 dBm

P-3dB = 53.6 dBm

Ideal

Actual

Typical Performance (data taken in a production test fixture)

DC Characteristics at TCASE = 25°C unless otherwise indicated

Characteristic

Conditions

Symbol

Min

Typ

Max

Units

Drain–Source Breakdown Voltage

VGS = 0 V, IDS = 10 µA/side

V(BR)DSS

65

—

V

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

1.0

µA

On–State Resistance

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.1

—

Ω

Operating Gate Voltage

VDS = 28 V, IDQ = 1.0 A/side

VGS

2.5

3.2

4

V

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

1.0

µA

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain–Source Voltage

VDSS

65

V

Gate–Source Voltage

VGS

–0.5 to +12

V

Junction Temperature

TJ

200

°C

Total Device Dissipation

PTF211802A

PD

498

W

Above 25°C derate by

2.85

W/°C

Total Device Dissipation

PTF211802E

PD

647

W

Above 25°C derate by

3.70

W/°C

Storage Temperature Range

TSTG

–40 to +150

°C

Thermal Resistance

PTF211802A

RθJC

0.35

°C/W

(TCASE = 70°C, 130 W CW)

PTF211802E

RθJC

0.27

°C/W

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