T2800D

2

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

R

θJC

2.2

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 10 Seconds

TL

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

TC = 25°C

TC = 100°C

IDRM,

IRRM

—

—

—

—

10

2.0

µA

mA

ON CHARACTERISTICS

Peak On-State Voltage(1)

(IT = "30 A Peak)

VTM

—

1.7

2.0

Volts

Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+)

IGT

—

—

—

—

10

20

15

30

25

60

25

60

mA

Gate Trigger Voltage (Continuous dc) (All Quadrants)

(VD = 12 Vdc, RL = 100 Ohms)

VGT

—

1.25

2.5

Volts

Gate Non–Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 Ohms, TC = 100°C)

VGD

0.2

—

—

Volts

Holding Current

(VD = 12 Vdc, Initiating Current = "200 mA, Gate Open)

IH

—

15

30

mA

Gate Controlled Turn-On Time

(VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 µs)

tgt

—

1.6

—

µs

DYNAMIC CHARACTERISTICS

Critical Rate-of-Rise of Commutation Voltage

(VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms,

Gate Unenergized, TC = 80°C)

dv/dt(c)

—

10

—

V/

µs

Critical Rate-of-Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Voltage Rise,

Gate Open, TC = 100°C)

dv/dt

60

—

—

V/

µs

(1) Pulse Test: Pulse Width

≤ 2.0 ms, Duty Cycle ≤ 2%.

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