C2M0160120D_15 datasheet(7/10 Pages) CREE

Part #	C2M0160120D

Description	Silicon Carbide Power MOSFET

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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C2M0160120D Rev. C, 10-2015

Typical Performance

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External Gate Resistor RG(ext) (Ohms)

EOff

EOn

ETotal

Conditions:

TJ = 25 °C

VDD = 800 V

IDS = 10 A

VGS = -5/+20 V

FWD = C4D05120A

L = 256 μH

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-25

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Junction Temperature, TJ (°C)

Conditions:

IDS = 10 A

VDD = 800 V

RG(ext) = 2.5 Ω

VGS = -5/+20 V

FWD = C4D10120A

L = 256 µH

EOff

EOn

ETotal

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External Gate Resistor, RG(ext) (Ohms)

Conditions:

TJ = 25 °C

VDD = 800 V

RL = 80 Ω

VGS = -5/+20 V

td (off)

td (on)

tf

tr

Figure 25. Clamped Inductive Switching Energy vs. R

G(ext)

Figure 26. Clamped Inductive Switching Energy vs.

Temperature

Figure28.SwitchingTimesDefinition

Figure 27. Switching Times vs. R

G(ext)

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Time in Avalanche TAV (us)

Conditons:

VDD = 50 V

Figure 29. Single Avalanche SOA curve

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