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C3M0280090J Rev. - , 12-2015

C3M0280090J

Silicon Carbide Power MOSFET

C3M

N-Channel Enhancement Mode

Features

Benefits

Applications

Package

Part Number

Package

C3M0280090J

7L D2PAK

V

DS

900 V

I

11 A

R

DS(on)

280 mΩ

Symbol

Parameter

Value

Unit

Test Conditions

Note

Drain - Source Voltage

900

V

Gate - Source Voltage

-8/+18

V

Absolute maximum values

Gate - Source Voltage

-4/+15

V

Recommended operational values

Note (1)

Continuous Drain Current

11

A

Fig. 19

7

Pulsed Drain Current

22

A

Fig. 22

P

D

Power Dissipation

50

W

T

Fig. 20

T

Operating Junction and Storage Temperature

-55 to

+150

˚C

T

L

Solder Temperature

260

˚C

1.6mm (0.063”) from case for 10s

Note (1): MOSFET can also safely operate at 0/+15 V

1 2 3 4 5 6 7

G KS S S S S S

TAB

Drain

Drain

(TAB)

Power

Source

(Pin 3,4,5,6,7)

Driver

Source

(Pin 2)

Gate

(Pin 1)