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C3M0280090J Datasheet(PDF) 1 Page - Cree, Inc |
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C3M0280090J Datasheet(HTML) 1 Page - Cree, Inc |
1 / 10 page 1 C3M0280090J Rev. - , 12-2015 C3M0280090J Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Highersystemefficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • Renewable energy • Lighting • High voltage DC/DC converters • Telecom Power Supplies • Induction Heating Package Part Number Package C3M0280090J 7L D2PAK V DS 900 V I D @ 25˚C 11 A R DS(on) 280 mΩ Maximum Ratings (T C=25˚Cunlessotherwisespecified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 900 V VGS = 0 V, ID=100μA VGSmax Gate - Source Voltage -8/+18 V Absolute maximum values VGSop Gate - Source Voltage -4/+15 V Recommended operational values Note (1) ID Continuous Drain Current 11 A VGS = 15 V, TC =25˚C Fig. 19 7 VGS = 15 V, TC =100˚C ID(pulse) Pulsed Drain Current 22 A Pulse width tP limited by Tjmax Fig. 22 P D Power Dissipation 50 W T C=25˚C,TJ=150˚C Fig. 20 T J , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C T L Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Note (1): MOSFET can also safely operate at 0/+15 V 1 2 3 4 5 6 7 G KS S S S S S TAB Drain Drain (TAB) Power Source (Pin 3,4,5,6,7) Driver Source (Pin 2) Gate (Pin 1) |
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