SN74LVC1GX04

SCES581D – JULY 2004 – REVISED OCTOBER 2015

www.ti.com

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

–0.5

6.5

V

–0.5

6.5

V

–0.5

6.5

V

–0.5

V

Input clamp current

–50

mA

Output clamp current

–50

mA

Continuous output current

±50

mA

±100

mA

Junction temperature

150

°C

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.

(3)

6.2 ESD Ratings

VALUE

UNIT

±2000

Electrostatic

V

discharge

Charged-device model (CDM), per AEC Q100-011

±1000

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

(1)

MIN

MAX

UNIT

Operating

1.65

5.5

Supply voltage

Data retention only

1.5

V

Crystal oscillator use

2

High-level input voltage

V

Low-level input voltage

V

Input voltage

0

5.5

V

X2, Y

0

Output voltage

V

0

5.5

–4

–8

High-level output current

–16

mA

–24

–32

4

8

Low-level output current

16

mA

24

32

(1)

Implications of Slow or Floating CMOS Inputs, SCBA004.

4

Submit Documentation Feedback

Copyright © 2004–2015, Texas Instruments Incorporated

Product Folder Links: SN74LVC1GX04