Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree

and the Cree logo are registered trademarks, and TR and TR3470M are trademarks of Cree, Inc.

2

CPR3FL Rev. A

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703-8475 USA

Tel: +1-919-313-5300

Fax: +1-919-313-5870

www.cree.com/chips

Maximum Ratings at T

Notes 1&3

CxxxTR3547M-Sxx00

DCForwardCurrent

150mA

PeakForwardCurrent(1/10dutycycle@1kHz)

200mA

LEDJunctionTemperature

150°C

ReverseVoltage

5V

OperatingTemperatureRange

-40°Cto+100°C

LEDChipStorageTemperature

-40°Cto+120°C

RecommendedDieSheetStorageConditions

≤30°C/≤85%RH

1000V

Class2

Typical Electrical/Optical Characteristics at T

Note 3

Part Number

Forward Voltage (V

Reverse Current

[I(Vr=5V), μA]

Full Width Half Max

(λ

Min.

Typ.

Max.

Max.

Typ.

C450TR3547M-Sxx00

2.8

3.2

3.5

2

20

C460TR3547M-Sxx00

2.8

3.2

3.5

2

21

Mechanical Specifications

CxxxTR3547M-Sxx00

Description

Dimension

Tolerance

P-NJunctionArea(μm)

310x430

±35

ChipArea(μm)

350x470

±35

ChipThickness(μm)

155

±15

AuBondPadDiameterAnode(μm)

90

-5,+15

AuBondPadThicknesses(μm)

1.0

±0.5

AuBondPadAreaCathode(μm)

98x98

-5,+15

BottomArea(μm)

200x320

±35

BottomContactMetal(μm)

160x280

±25

BottomContactMetalThickness(μm)

3.0

±1.0

Notes:

1. Maximumratingsarepackage-dependent.TheaboveratingsweredeterminedusingaCreeSMTpackage(withsiliconeencapsulation

andintrinsicAuSnmetaldieattach)forcharacterization.Ratingsforotherpackagesmaydiffer.Junctiontemperatureshouldbe

characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5

seconds).

2. Productresistancetoelectrostaticdischarge(ESD)accordingtotheHBMismeasuredbysimulatingESDusingarapidavalanche

energytest(RAET).TheRAETproceduresaredesignedtoapproximatethemaximumESDratingsshown.

3. Allproductsconformtothelistedminimumandmaximumspecificationsforelectricalandopticalcharacteristicswhenassembled

andoperatedat50mAwithinthemaximumratingsshownabove.Efficiencydecreasesathighercurrents.Typicalvaluesgiven

arewithintherangeofaveragevaluesexpectedbymanufacturerinlargequantitiesandareprovidedforinformationonly.All

measurementsweremadeusinglampsinT-13/4packages(withHysolOS4000epoxyencapsulantandintrinsicAuSnmetaldie

attach).OpticalcharacteristicsmeasuredinanintegratingsphereusingIlluminanceE.