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C470RT260-S1400 Datasheet(PDF) 2 Page - Cree, Inc

Part # C470RT260-S1400
Description  Reduced Forward Voltage 3.2 V Typical at 20 mA
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

C470RT260-S1400 Datasheet(HTML) 2 Page - Cree, Inc

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Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
2
CPR3DT Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Maximum Ratings at T
A = 25°C
Notes 1&3
CxxxRT260-Sxxxx
DCForwardCurrent
50mA
PeakForwardCurrent(1/10dutycycle@1kHz)
100mA
LEDJunctionTemperature
125°C
ReverseVoltage
5V
OperatingTemperatureRange
-40°Cto+100°C
StorageTemperatureRange
-40°Cto+100°C
ElectrostaticDischargeThreshold(HBM)Note2
1000V
ElectrostaticDischargeClassification(MIL-STD-883E)Note2
Class2
Typical Electrical/Optical Characteristics at T
A = 25°C, If = 20 mA
Note 3
Part Number
Forward Voltage (V
f, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max.
D, nm)
Min.
Typ.
Max.
Max.
Typ.
C460RT260-Sxxxx
2.7
3.2
3.7
1
24
C470RT260-Sxxxx
2.7
3.2
3.7
1
25
C527RT260-Sxxxx
2.7
3.3
3.7
1
40
Mechanical Specifications
CxxxRT260-Sxxxx
Description
Dimension
Tolerance
P-NJunctionArea(μm)
210x210
±35
TopArea(μm)
260x260
±35
BottomArea(μm)
230x230
±35
ChipThickness(μm)
95
±15
AuBondPadDiameter(μm)
112
±20
AuBondPadThickness(μm)
1.0
±0.5
BackContactMetalWidth(μm)
90
±10
Notes:
1. Maximumratingsarepackagedependent.TheaboveratingsweredeterminedusingaT-13/4package(withHysolOS4000epoxy)
forcharacterization.SellermakesnorepresentationsregardingratingsforpackagesotherthantheT-13/4packageusedbySeller.
Theforwardcurrents(DCandPeak)arenotlimitedbytheG•SiCdiebutbytheeffectoftheLEDjunctiontemperatureonthe
package.Thejunctiontemperaturelimitof125°CisalimitoftheT-13/4package;junctiontemperatureshouldbecharacterized
inaspecificpackagetodeterminelimitations.Assemblyprocessingtemperaturemustnotexceed325°C(<5seconds).
2. Productresistancetoelectrostaticdischarge(ESD)ismeasuredbysimulatingESDusingarapidavalancheenergytest(RAET).
TheRAETproceduresaredesignedtoapproximatethemaximumESDratingsshown.Sellergivesnootherassurancesregarding
theabilityofProductstowithstandESD.
3. Allproductsconformtothelistedminimumandmaximumspecificationsforelectricalandopticalcharacteristicswhenassembled
andoperatedat20mAwithinthemaximumratingsshownabove.Efficiencydecreasesathighercurrents.Typicalvaluesgiven
aretheaveragevaluesexpectedbySellerinlargequantitiesandareprovidedforinformationonly.Sellergivesnoassurances
productsshippedwillexhibitsuchtypicalratings.AllmeasurementsweremadeusinglampsinT-13/4packages(withHysol
OS4000epoxy).DominantwavelengthmeasurementstakenusingIlluminanceE.
4. Specificationsaresubjecttochangewithoutnotice.


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