1

Subject to change without notice.

www.cree.com

FEATURES

• Thin95-μmChip

• ReducedForwardVoltage

– 2.9VTypicalat5mA

• RazerThinLEDPerformance

– 460nm-3.8–11.1mW

– 470nm-3.4–10.4mW

– 505nm-2.0–6.5mW

– 527nm-1.7–6.0mW

• SingleWireBondStructure

• Class-2ESDRating

APPLICATIONS

• MobilePhoneKeyPads

– WhiteLEDs

– BlueLEDs

– GreenLEDs

• CellularPhoneLCDBacklighting

• DigitalCameraFlashforMobileAppliance

• AutomotiveDashboardLighting

• LEDVideoDisplays

• AudioProductDisplayLighting

CxxxRT290-S0100

Data Sheet

Cree’sRazerThinLEDsareanewgenerationofsolid-stateLEDemittersthatcombinehighlyefficientInGaNmaterials

withCree’sproprietaryG•SiC®substratetodeliversuperiorprice/performanceforhigh-intensityblueandgreen

LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward

voltage.Cree’sRazerThinserieschipshavetheabilitytowithstand1000-VESD.ApplicationsforRazerThinLEDs

includenext-generationkeypadbacklightingwheresub-miniaturizationandthinnerformfactorsarerequired.

CxxxRT290-S0100 Chip Diagram

Top View

Bottom View

G•SiCLEDChip

270x270μm

SiCSubstrate

h=95μm

Backside

Metallization

GoldBondPad

110μmDiameter

Die Cross Section

Cathode(-)

Anode(+)

Mesa(junction)

246x246μm

InGaN