7

CGH09120F Rev 2.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are

registered trademarks of Cree, Inc.

Source and Load Impedances

Frequency (MHz)

Z Source

Z Load

700

0.75 - j 0.58

5.59 - j 2.12

750

0.84 - j 0.18

4.97 - j 1.25

800

0.90 + j 0.19

4.68 - j 0.37

850

0.95 + j 0.59

4.59 + j 0.45

900

1.02 + j 1.03

4.67 + j 1.19

950

1.17 + j 1.53

4.90 + j 1.82

1000

1.53 + j 2.10

5.28 + j 2.31

and are not source and load pull data derived from transistor.

CGH09120F Power Dissipation De-rating Curve

Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).

D

Z Source

Z Load

G

S

40

50

60

70

CGH09120F Average Power Dissipation De-rating Curve

0

10

20

30

40

0

25

50

75

100

125

150

175

200

225

250

Maximum Case Temperature (°C)

Note 1