CGH55015-TB datasheet(4/11 Pages) CREE

4 / 11 page

4

CGH55015F2_P2 Rev 4.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

registered trademarks of Cree, Inc.

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH55015F2/CGH55015P2

V

DD = 28 V, IDQ = 200 mA

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency

of the CGH55015F2/CGH55015P2

V

DD = 28 V, IDQ = 200 mA

Electrostatic Discharge (ESD) Classifications

Parameter

Symbol

Class

Test Methodology

Human Body Model

HBM

1A > 250 V

JEDEC JESD22 A114-D

Charge Device Model

CDM

1 < 200 V

JEDEC JESD22 C101-C

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