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CGH60120D Datasheet(PDF) 4 Page - Cree, Inc

Part # CGH60120D
Description  120 W, 6.0 GHz, GaN HEMT Die
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

CGH60120D Datasheet(HTML) 4 Page - Cree, Inc

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CGH60120D Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH60120D
V
DD = 28 V, IDQ = 1000 mA
Intrinsic die parameters - reference planes at centers of gate and drain bonding pads. No wire bonds assumed.
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH60120D
V
DD = 28 V, IDQ = 1000 mA


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