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CGHV1F006S-AMP2 Datasheet(PDF) 1 Page - Cree, Inc |
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CGHV1F006S-AMP2 Datasheet(HTML) 1 Page - Cree, Inc |
1 / 22 page 1 Subject to change without notice. www.cree.com/rf CGHV1F006S 6 W, DC - 18 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet specifications are based on a C-Band (5.5 - 6.5 GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 - 9.6 GHz. The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40V to as low as 20V V DD, maintaining high gain and efficiency. Package Type: 3x4 DFN PN: CGHV1F006S Features for 40 V in CGHV1F006S-AMP • Up to 18 GHz Operation • 8 W Typical Output Power • 17 dB Gain at 6.0 GHz • 15 dB Gain at 9.0 GHz • Application circuits for 5.8 - 7.2 GHz, 7.9 - 8.4 GHz, and 8.5 - 9.6 GHz. • High degree of APD and DPD correction can be applied Typical Performance 5.5-6.5 GHz (T C = 25˚C) , 40 V Parameter 5.5 GHz 6.0 GHz 6.5 GHz Units Small Signal Gain 15.4 16.5 17.8 dB Output Power @ P IN = 28 dBm 38.6 39.3 39.0 dBm Drain Efficiency @ P IN = 28 dBm 55 57 52 % Note: Measured in the CGHV1F006S-AMP application circuit. Pulsed 100 µs 10% duty. Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit Operating Frequency Amplifier Class Operating Voltage CGHV1F006S-AMP1 5.85 - 7.2 GHz Class A/B 40 V CGHV1F006S-AMP2 7.9 - 8.4 GHz Class A/B 40 V CGHV1F006S-AMP3 8.5 - 9.6 GHz Class A/B 40 V CGHV1F006S-AMP4 4.9 - 5.9 GHz Class A/B 20 V |
Similar Part No. - CGHV1F006S-AMP2 |
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Similar Description - CGHV1F006S-AMP2 |
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