CGHV14250F-AMP datasheet(2/11 Pages) CREE

Part #	CGHV14250F-AMP

Description	250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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2

CGHV14250 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Absolute Maximum Ratings (not simultaneous)

Parameter

Symbol

Rating

Units

Conditions

Drain-Source Voltage

V

DSS

125

Volts

25˚C

Gate-to-Source Voltage

V

GS

-10, +2

Volts

25˚C

Storage Temperature

T

STG

-65, +150

˚C

Operating Junction Temperature

T

J

225

˚C

Maximum Forward Gate Current

I

GMAX

42

mA

25˚C

Maximum Drain Current1

I

DMAX

18

A

25˚C

Soldering Temperature2

T

S

245

˚C

Screw Torque

τ

40

in-oz

CW Thermal Resistance, Junction to Case3

R

θ

JC

0.95

˚C/W

P

DISS = 167 W, 65˚C

Pulsed Thermal Resistance, Junction to Case3

R

θ

JC

0.57

˚C/W

P

DISS = 167 W, 500 µsec, 10%, 85˚C

Pulsed Thermal Resistance, Junction to Case4

R

θ

JC

0.63

˚C/W

P

DISS = 167 W, 500 µsec, 10%, 85˚C

Case Operating Temperature5

T

C

-40, +130

˚C

P

DISS = 167 W, 500 µsec, 10%

Note:

1

Current limit for long term, reliable operation

2

Refer to the Application Note on soldering at http://www.cree.com/rf/document-library

3

Measured for the CGHV14250P

4

Measured for the CGHV14250F

5

See also, the Power Dissipation De-rating Curve on Page 5

Electrical Characteristics

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

DC Characteristics1 (T

C = 25˚C)

Gate Threshold Voltage

V

GS(th)

-3.8

-3.0

-2.3

V

DC

V

DS = 10 V, ID = 41.8 mA

Gate Quiescent Voltage

V

GS(Q)

–

-2.7

–

V

DC

V

DS = 50 V, ID = 500 mA

Saturated Drain Current2

I

DS

31.4

37.6

–

A

V

DS = 6.0 V, VGS = 2.0 V

Drain-Source Breakdown Voltage

V

BR

150

–

V

DC

V

GS = -8 V, ID = 41.8 mA

RF Characteristics3 (T

C = 25˚C, F0 = 1.3 GHz unless otherwise noted)

Output Power

P

OUT

275

330

–

W

V

DD = 50 V, IDQ = 500 mA, PIN = 37 dBm

Drain Efficiency

D

E

63

77

–

%

V

DD = 50 V, IDQ = 500 mA, PIN = 37 dBm

Power Gain

G

P

–

18.2

–

dB

V

DD = 50 V, IDQ = 500 mA, PIN = 37 dBm

Pulsed Amplitude Droop

D

–

-0.3

–

dB

V

DD = 50 V, IDQ = 500 mA

Output Mismatch Stress

VSWR

–

5 : 1

–

Y

No damage at all phase angles,

V

DD = 50 V, IDQ = 500 mA, PIN = 37 dBm Pulsed

Notes:

1

Measured on wafer prior to packaging.

2

Scaled from PCM data.

3

Measured in CGHV14250-AMP. Pulse Width = 500 μS, Duty Cycle = 10%.

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