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CGHV27015S Datasheet(PDF) 1 Page - Cree, Inc |
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CGHV27015S Datasheet(HTML) 1 Page - Cree, Inc |
1 / 12 page 1 Subject to change without notice. www.cree.com/rf CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications from 10MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as well as a driver stage amplifier for RADAR, EW, and SatCom devices. At a Vdd of 50 V, the device provide 2.5W of average power or 15W of peak power. At a Vdd of 28V, the device provides 1S of average power and 7W of peak power. The transistor is available in a 3mm x 4mm, surface mount, dual-flat- no-lead (DFN) package. Package Type: 3x4 DFN PN: CGHV27015S Features for 50 V in CGHV27015S-AMP1 • 2.4 - 2.7 GHz Operation • 15 W Typical Output Power • 21 dB Gain at 2.5 W P AVE • -38 dBc ACLR at 2.5 W P AVE • 32% efficiency at 2.5 W P AVE • High degree of APD and DPD correction can be applied Typical Performance 2.4-2.7 GHz (T C = 25˚C) , 50 V Parameter 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units Small Signal Gain 23 22 21.7 21.2 dB Adjacent Channel Power @ P OUT = 2.5 W -36.7 -40.7 -42.4 -42.5 dBc Drain Efficiency @ P OUT = 2.5 W 35.9 33.5 30.4 30.2 % Input Return Loss -9.312 -9.6 -8.6 -7.8 dB Note: Measured in the CGHV27015S-AMP1 application circuit. Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH. |
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