CGHV40030 datasheet(2/11 Pages) CREE

Part #	CGHV40030

Description	30 W, DC - 6 GHz, 50V, GaN HEMT

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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2

CGHV40030 Rev 1.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter

Symbol

Rating

Units

Notes

Drain-Source Voltage

V

DSS

125

Volts

25˚C

Gate-to-Source Voltage

V

GS

-10, +2

Volts

25˚C

Storage Temperature

T

STG

-65, +150

˚C

Operating Junction Temperature

T

J

225

˚C

Maximum Forward Gate Current

I

GMAX

5.2

mA

25˚C

Maximum Drain Current1

I

DMAX

4.2

A

25˚C

Soldering Temperature2

T

S

245

˚C

Case Operating Temperature3,4

T

C

-40, +150

˚C

Thermal Resistance, Junction to Case5

R

θ

JC

5.9

˚C/W

85˚C

Note:

1

Current limit for long term, reliable operation

2

Refer to the Application Note on soldering at www.cree.com/rf/document-library

3

Simulated at P

DISS = 23.4 W

4

T

C = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal

resistance.

5

CW

Electrical Characteristics (T

C = 25˚C) - 50 V Typical

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

DC Characteristics1

Gate Threshold Voltage

V

GS(th)

-3.8

-3.0

-2.3

V

DC

V

DS = 10 V, ID = 5.2 mA

Gate Quiescent Voltage

V

GS(Q)

–

-2.6

–

V

DC

V

DS = 50 V, ID = 150 mA

Saturated Drain Current2

I

DS

3.9

5.2

–

A

V

DS = 6.0 V, VGS = 2.0 V

Drain-Source Breakdown Voltage

V

(BR)DSS

125

–

V

DC

V

GS = -8 V, ID = 5.2 mA

RF Characteristics3 (T

C = 25˚C, F0 = 1.2 GHz unless otherwise noted)

Power Gain

G

P

15.5

16

-

dB

V

DD = 50 V, IDQ = 150 mA, POUT = PSAT

Output Power4

P

OUT

30

35

–

W

V

DD = 50 V, IDQ = 150 mA, POUT = PSAT

Drain Efficiency4

η

62

65

-

%

V

DD = 50 V, IDQ = 150 mA, POUT = PSAT

Output Mismatch Stress4

VSWR

-

10 : 1

Y

No damage at all phase angles,

V

DD = 50 V, IDQ = 150 mA, POUT = 30 W CW

Dynamic Characteristics

Input Capacitance5

C

GS

–

7.4

–

pF

V

DS = 50 V, Vgs = -8 V, f = 1 MHz

Output Capacitance5

C

DS

–

2

–

pF

V

DS = 50 V, Vgs = -8 V, f = 1 MHz

Feedback Capacitance

C

GD

–

0.15

–

pF

V

DS = 50 V, Vgs = -8 V, f = 1 MHz

Notes:

1

Measured on wafer prior to packaging

2

Scaled from PCM data

3

Measured in CGHV40030-AMP

4

P

SAT is defined as IG = 0.52 mA

5

Includes package

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