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CGHV40030 Datasheet(PDF) 2 Page - Cree, Inc |
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CGHV40030 Datasheet(HTML) 2 Page - Cree, Inc |
2 / 11 page 2 CGHV40030 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage V DSS 125 Volts 25˚C Gate-to-Source Voltage V GS -10, +2 Volts 25˚C Storage Temperature T STG -65, +150 ˚C Operating Junction Temperature T J 225 ˚C Maximum Forward Gate Current I GMAX 5.2 mA 25˚C Maximum Drain Current1 I DMAX 4.2 A 25˚C Soldering Temperature2 T S 245 ˚C Case Operating Temperature3,4 T C -40, +150 ˚C Thermal Resistance, Junction to Case5 R θ JC 5.9 ˚C/W 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/rf/document-library 3 Simulated at P DISS = 23.4 W 4 T C = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. 5 CW Electrical Characteristics (T C = 25˚C) - 50 V Typical Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage V GS(th) -3.8 -3.0 -2.3 V DC V DS = 10 V, ID = 5.2 mA Gate Quiescent Voltage V GS(Q) – -2.6 – V DC V DS = 50 V, ID = 150 mA Saturated Drain Current2 I DS 3.9 5.2 – A V DS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage V (BR)DSS 125 – – V DC V GS = -8 V, ID = 5.2 mA RF Characteristics3 (T C = 25˚C, F0 = 1.2 GHz unless otherwise noted) Power Gain G P 15.5 16 - dB V DD = 50 V, IDQ = 150 mA, POUT = PSAT Output Power4 P OUT 30 35 – W V DD = 50 V, IDQ = 150 mA, POUT = PSAT Drain Efficiency4 η 62 65 - % V DD = 50 V, IDQ = 150 mA, POUT = PSAT Output Mismatch Stress4 VSWR - - 10 : 1 Y No damage at all phase angles, V DD = 50 V, IDQ = 150 mA, POUT = 30 W CW Dynamic Characteristics Input Capacitance5 C GS – 7.4 – pF V DS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance5 C DS – 2 – pF V DS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance C GD – 0.15 – pF V DS = 50 V, Vgs = -8 V, f = 1 MHz Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGHV40030-AMP 4 P SAT is defined as IG = 0.52 mA 5 Includes package |
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