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DRV8312DDW Datasheet(PDF) 9 Page - Texas Instruments |
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DRV8312DDW Datasheet(HTML) 9 Page - Texas Instruments |
9 / 39 page 0 100 10 20 30 40 50 60 70 80 90 Input Duty Cycle (%) 90 60 100 0 70 40 20 10 30 50 80 1.6 0.4 0.6 0.8 1.0 T – Junction Temperature – C J o 80 40 120 –40 60 20 –20 0 100 1.2 1.4 140 –1 5 0 1 2 3 Voltage (V) 1.2 0.8 0 1 0.6 0.2 0.4 4 6 1.10 0.96 1.00 0.98 1.02 1.04 Gate Drive (V) 11.0 10.0 8.0 10.5 9.5 8.5 9.0 11.5 1.06 1.08 12 0 100 40 50 60 70 80 90 Switching Frequency (kHz) 0 100 150 200 250 300 350 400 450 500 50 10 20 30 DRV8312, DRV8332 www.ti.com SLES256E – MAY 2010 – REVISED DECEMBER 2014 7.8 Typical Characteristics Full Bridge Load: 5 TJ = 25ºC A; PVDD = 50 V; Tc = 75ºC Figure 2. Normalized RDS(on) vs Gate Drive Figure 1. Efficiency vs Switching Frequency (DRV8332) TJ = 25ºC GVDD = 12 V Figure 4. Drain To Source Diode Forward Figure 3. Normalized RDS(on) vs Junction Temperature On Characteristics FS = 500 kHz; TC = 25ºC Figure 5. Output Duty Cycle vs Input Duty Cycle Copyright © 2010–2014, Texas Instruments Incorporated Submit Documentation Feedback 9 Product Folder Links: DRV8312 DRV8332 |
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