Electronic Components Datasheet Search |
|
CGHV96100F2 Datasheet(PDF) 2 Page - Cree, Inc |
|
CGHV96100F2 Datasheet(HTML) 2 Page - Cree, Inc |
2 / 13 page 2 CGHV96100F2 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage V DSS 100 Volts 25˚C Gate-source Voltage V GS -10, +2 Volts 25˚C Power Dissipation P DISS 115.2 / 222.0 Watts (CW / Pulse) Storage Temperature T STG -65, +150 ˚C Operating Junction Temperature T J 225 ˚C Maximum Drain Current1 I DMAX 12 Amps Maximum Forward Gate Current I GMAX 28.8 mA 25˚C Soldering Temperature2 T S 245 ˚C Screw Torque τ 40 in-oz Thermal Resistance, Junction to Case R θ JC 0.73 ˚C/W Pulse Width = 100 µs, Duty Cycle = 10%, 85˚C, P DISS = 173 W Thermal Resistance, Junction to Case R θ JC 1.07 ˚C/W CW, 85˚C, P DISS = 115.2 W Case Operating Temperature3 T C -40, +150 ˚C Note: 1 Current limit for long term reliable operation. 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 See also, the Power Dissipation De-rating Curve on Page 9. Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated; T C = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage V GS(TH) -3.8 -3.0 -2.3 V V DS = 10 V, ID = 28.8 mA Gate Quiscent Voltage V GS(Q) – -2.7 – V V DS = 40 V, ID = 1000 mA Saturated Drain Current2 I DS 21.0 26.0 – A V DS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage V BD 100 – – V V GS = -8 V, ID = 28.8 mA RF Characteristics3 Small Signal Gain S21 10.5 12.4 – dB V DD = 40 V, IDQ = 1000 mA, PIN = -20 dBm Input Return Loss 1 S11 – –5.2 -2.8 dB V DD = 40 V, IDQ = 1000 mA, PIN = -20 dBm, 8.4 - 9.4 GHz Input Return Loss 2 S11 – – -3.3 dB V DD = 40 V, IDQ = 1000 mA, PIN = -20 dBm, 9.4 - 9.6 GHz Output Return Loss S22 – –12.3 -6.0 dB V DD = 40 V, IDQ = 1000 mA, PIN = -20 dBm Power Output3,4 P OUT 100 131.0 – W V DD = 40 V, IDQ = 1000 mA, PIN = 41 dBm Power Added Efficiency3,4 PAE 30 45 – % V DD = 40 V, IDQ = 1000 mA, PIN = 41 dBm Power Gain3,4 P G – 10.2 – dB V DD = 40 V, IDQ = 1000 mA, PIN = 41 dBm Output Mismatch Stress VSWR – – 5:1 Y No damage at all phase angles, V DD = 40 V, IDQ = 1000 mA, Notes: 1 Measured on-wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV96100F2-AMP (838179) under 100 µS pulse width, 10% duty 4 Fixture loss de-embedded using the following offsets: Frequency = 9.6 GHz. Input = 0.5 dB and Output = 0.5 dB. |
Similar Part No. - CGHV96100F2 |
|
Similar Description - CGHV96100F2 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |