CGHV96100F2-JMT datasheet(2/13 Pages) CREE

Part #	CGHV96100F2-JMT

Description	100 W, 7.9 - 9.6 GHz, 50-ohm, Input

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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CGHV96100F2 Rev 2.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific

product and/or vendor endorsement, sponsorship or association.

Absolute Maximum Ratings (not simultaneous)

Parameter

Symbol

Rating

Units

Conditions

Drain-source Voltage

V

DSS

100

Volts

25˚C

Gate-source Voltage

V

GS

-10, +2

Volts

25˚C

Power Dissipation

P

DISS

115.2 / 222.0

Watts

(CW / Pulse)

Storage Temperature

T

STG

-65, +150

˚C

Operating Junction Temperature

T

J

225

˚C

Maximum Drain Current1

I

DMAX

12

Amps

Maximum Forward Gate Current

I

GMAX

28.8

mA

25˚C

Soldering Temperature2

T

S

245

˚C

Screw Torque

τ

40

in-oz

Thermal Resistance, Junction to Case

R

θ

JC

0.73

˚C/W

Pulse Width = 100 µs, Duty Cycle = 10%, 85˚C,

P

DISS = 173 W

Thermal Resistance, Junction to Case

R

θ

JC

1.07

˚C/W

CW, 85˚C, P

DISS = 115.2 W

Case Operating Temperature3

T

C

-40, +150

˚C

Note:

1

Current limit for long term reliable operation.

2

Refer to the Application Note on soldering at http://www.cree.com/rf/document-library

3

See also, the Power Dissipation De-rating Curve on Page 9.

Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated; T

C = 25˚C)

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

DC Characteristics1

Gate Threshold Voltage

V

GS(TH)

-3.8

-3.0

-2.3

V

DS = 10 V, ID = 28.8 mA

Gate Quiscent Voltage

V

GS(Q)

–

-2.7

–

V

DS = 40 V, ID = 1000 mA

Saturated Drain Current2

I

DS

21.0

26.0

–

A

V

DS = 6.0 V, VGS = 2.0 V

Drain-Source Breakdown Voltage

V

BD

100

–

V

GS = -8 V, ID = 28.8 mA

RF Characteristics3

Small Signal Gain

S21

10.5

12.4

–

dB

V

DD = 40 V, IDQ = 1000 mA, PIN = -20 dBm

Input Return Loss 1

S11

–

–5.2

-2.8

dB

V

DD = 40 V, IDQ = 1000 mA, PIN = -20 dBm,

8.4 - 9.4 GHz

Input Return Loss 2

S11

–

-3.3

dB

V

DD = 40 V, IDQ = 1000 mA, PIN = -20 dBm,

9.4 - 9.6 GHz

Output Return Loss

S22

–

–12.3

-6.0

dB

V

DD = 40 V, IDQ = 1000 mA, PIN = -20 dBm

Power Output3,4

P

OUT

100

131.0

–

W

V

DD = 40 V, IDQ = 1000 mA, PIN = 41 dBm

Power Added Efficiency3,4

PAE

30

45

–

%

V

DD = 40 V, IDQ = 1000 mA, PIN = 41 dBm

Power Gain3,4

P

G

–

10.2

–

dB

V

DD = 40 V, IDQ = 1000 mA, PIN = 41 dBm

Output Mismatch Stress

VSWR

–

5:1

Y

No damage at all phase angles, V

DD = 40 V, IDQ = 1000 mA,

Notes:

1

Measured on-wafer prior to packaging.

2

Scaled from PCM data.

3

Measured in CGHV96100F2-AMP (838179) under 100 µS pulse width, 10% duty

4

Fixture loss de-embedded using the following offsets: Frequency = 9.6 GHz. Input = 0.5 dB and Output = 0.5 dB.

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