1

Subject to change without notice.

www.cree.com/wireless

CMPA2060025D

25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier

Cree’s CMP2060025D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated

electron drift velocity and higher thermal conductivity. GaN HEMTs

also offer greater power density and wider bandwidths compared to

Si and GaAs transistors. This MMIC contains a two-stage reactively

matched amplifier design approach enabling very wide bandwidths to

be achieved.

PN: CMPA2060025D

Parameter

2.0 GHz

3.0 GHz

4.0 GHz

5.0 GHz

6.0 GHz

Units

Small Signal Gain

31

33

27

23

27

dB

Saturated Output Power, P

SAT

1

29

26

38

27

45

W

Power Gain @ P

23

23

18

16

18

dB

PAE @ P

42

40

50

28

38

%

Data with 50Ω output load. Output transformer can improve performance.

Features

SAT

Applications