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CMPA2060025D Datasheet(PDF) 1 Page - Cree, Inc |
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CMPA2060025D Datasheet(HTML) 1 Page - Cree, Inc |
1 / 7 page 1 Subject to change without notice. www.cree.com/wireless CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. PN: CMPA2060025D Typical Performance Over 2.0-6.0 GHz (T C = 25˚C) Parameter 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Small Signal Gain 31 33 27 23 27 dB Saturated Output Power, P SAT 1 29 26 38 27 45 W Power Gain @ P OUT = 44 dBm 23 23 18 16 18 dB PAE @ P OUT 44 dBm 42 40 50 28 38 % Note1: P SAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA. Typical Data with 50Ω output load. Output transformer can improve performance. Features • 21 dB Small Signal Gain • 23 W Typical P SAT • Operation up to 28 V • High Breakdown Voltage • High Temperature Operation • Size 0.142 x 0.144 x 0.004 inches Applications • Ultra Broadband Drivers • Fiber Drivers • Test Instrumentation • EMC Amplifier Drivers |
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