3

CMPA2560025D Rev 1.3

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree

and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their

respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.

Die Dimensions (units in microns)

Overall die size 3680 x 4560 (+0/-50) microns, die thickness 100 (+/-10) microns.

All Gate and Drain pads must be wire bonded for electrical connection.

Pad Number

Function

Description

Pad Size (microns)

Note

1

RF-IN

RF-Input pad. Matched to 50 ohm. Requires gate control from an external bias –T from

-1.5 V to -2.5 V and external blocking capacitor.

202 X 204

3

2

VG1_A

Gate control for stage 1. V

138 x 147

1,2

3

VG1_B

Gate control for stage 1. V

138 x 147

1,2

4

VD1_A

Drain supply for stage 1. V

167 x 225

1

5

VD1_B

Drain supply for stage 1. V

167 x 225

1

6

VG2_A

Gate control for stage 2A. V

G

-1.5 - 2.5 V.

167 x 175

1

7

VG2_B

Gate control for stage 2B. V

G

-1.5 - 2.5 V.

167 x 175

1

8

VD2_A

Drain supply for stage 2A. V

A

1

9

VD2_B

Drain supply for stage 2B. V

A

1

10

RF-Out

This pad is DC blocked internally. The DC impedance ~ 0 ohm due output matching

circuit. Requires external matching circuit for optimal performance for f >4.0 GHz.

252 x 204

3

Notes:

1

Attach bypass capacitor to port 2-9 per application circuit.

2

VG1_A and VG1_B is connected internally so it would be enough to connect either one for proper operation.

3

The RF Input and Output pad have a ground-signal-ground with a pitch of 10 mil (250 um).

Die Assembly Notes:

application note at http://www.cree.com/products/wireless_appnotes.asp