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CMPA2560025D Datasheet(PDF) 3 Page - Cree, Inc |
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CMPA2560025D Datasheet(HTML) 3 Page - Cree, Inc |
3 / 9 page 3 CMPA2560025D Rev 1.3 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Die Dimensions (units in microns) Overall die size 3680 x 4560 (+0/-50) microns, die thickness 100 (+/-10) microns. All Gate and Drain pads must be wire bonded for electrical connection. Pad Number Function Description Pad Size (microns) Note 1 RF-IN RF-Input pad. Matched to 50 ohm. Requires gate control from an external bias –T from -1.5 V to -2.5 V and external blocking capacitor. 202 X 204 3 2 VG1_A Gate control for stage 1. V G -1.5 - 2.5 V. 138 x 147 1,2 3 VG1_B Gate control for stage 1. V G -1.5 - 2.5 V. 138 x 147 1,2 4 VD1_A Drain supply for stage 1. V D = 26 V. 167 x 225 1 5 VD1_B Drain supply for stage 1. V D = 26 V. 167 x 225 1 6 VG2_A Gate control for stage 2A. V G -1.5 - 2.5 V. 167 x 175 1 7 VG2_B Gate control for stage 2B. V G -1.5 - 2.5 V. 167 x 175 1 8 VD2_A Drain supply for stage 2A. V D = 26 V. A 1 9 VD2_B Drain supply for stage 2B. V D = 26 V. A 1 10 RF-Out This pad is DC blocked internally. The DC impedance ~ 0 ohm due output matching circuit. Requires external matching circuit for optimal performance for f >4.0 GHz. 252 x 204 3 Notes: 1 Attach bypass capacitor to port 2-9 per application circuit. 2 VG1_A and VG1_B is connected internally so it would be enough to connect either one for proper operation. 3 The RF Input and Output pad have a ground-signal-ground with a pitch of 10 mil (250 um). Die Assembly Notes: • Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at http://www.cree.com/products/wireless_appnotes.asp • Vacuum collet is the preferred method of pick-up. • The backside of the die is the Source (ground) contact. • Die back side gold plating is 5 microns thick minimum. • Thermosonic ball or wedge bonding are the preferred connection methods. • Gold wire must be used for connections. • Use the die label (XX-YY) for correct orientation. |
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