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DRV8885 Datasheet(PDF) 7 Page - Texas Instruments |
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DRV8885 Datasheet(HTML) 7 Page - Texas Instruments |
7 / 40 page DRV8885 www.ti.com SLVSD39 – OCTOBER 2015 Electrical Characteristics (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT MOTOR DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2) RDS(ON) High-side FET on resistance VM = 24 V, I = 1 A, TA = 25°C 440 490 m Ω RDS(ON) Low-side FET on resistance VM = 24 V, I = 1 A, TA = 25°C 420 460 m Ω tRISE (2) Output rise time 100 ns tFALL (2) Output fall time 100 ns tDEAD (2) Output dead time 200 ns Vd (2) Body diode forward voltage IOUT = 0.5 A 0.7 1.0 V PWM CURRENT CONTROL (RREF) ARREF RREF transimpedance gain 28.1 30 31.9 kA Ω VRREF RREF voltage RREF = 18 to 132 k Ω 1.18 1.232 1.28 V tOFF PWM off-time 20 μs Equivalent capacitance on CRREF 10 pF RREF IRREF = 1.5 A, 63% to 100% current 1.5 setting tBLANK PWM blanking time µs IRREF = 1.5 A, 0% to 63% current 1.0 setting IRREF = 1.0 A, 10% to 20% current –25% 25% setting, 1% reference resistor IRREF = 1.0 A, 20% to 63% current ΔITRIP Current trip accuracy –12.5% 12.5% setting, 1% reference resistor IRREF = 1.0 A, 71% to 100% current –6.25% 6.25% setting, 1% reference resistor PROTECTION CIRCUITS VM falling; UVLO report 7.8 VUVLO VM UVLO V VM rising; UVLO recovery 8.0 VUVLO,HYS Undervoltage hysteresis Rising to falling threshold 100 mV VCPUV Charge pump undervoltage VCP falling; CPUV report VM + 2.0 V Overcurrent protection trip IOCP Current through any FET 2.3 A level tOCP Overcurrent deglitch time 1.3 1.9 2.8 μs tRETRY Overcurrent retry time 1 1.6 ms Thermal shutdown TTSD (2) Die temperature TJ 150 °C temperature THYS (2) Thermal shutdown hysteresis Die temperature TJ 20 °C (2) Not tested in production; limits are based on characterization data Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: DRV8885 |
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