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SPD25N06S2-40 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPD25N06S2-40 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 2003-05-09 Page 1 SPD25N06S2-40 OptiMOS® Power-Transistor Product Summary VDS 55 V RDS(on) 40 m Ω ID 29 A Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated P- TO252 -3-11 Marking 2N0640 Type Package Ordering Code SPD25N06S2-40 P- TO252 -3-11 Q67060-S7427 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C ID 29 20 A Pulsed drain current TC=25°C ID puls 116 Avalanche energy, single pulse ID=25A, VDD=25V, RGS=25Ω EAS 80 mJ Repetitive avalanche energy, limited by Tjmax1) EAR 6.8 Reverse diode dv/dt IS=25A, VDS=44V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 68 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 |
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