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SPD50N06S2L-13 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # SPD50N06S2L-13
Description  OptiMOS Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPD50N06S2L-13 Datasheet(HTML) 1 Page - Infineon Technologies AG

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2003-05-09
Page 1
SPD50N06S2L-13
OptiMOS® Power-Transistor
Product Summary
VDS
55
V
RDS(on)
12.7
m
Ω
ID
50
A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Avalanche rated
• dv/dt rated
P- TO252 -3-11
Marking
PN06L13
Type
Package
Ordering Code
SPD50N06S2L-13
P- TO252 -3-11 Q67060- S7421
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current 1)
TC=25°C
ID
50
50
A
Pulsed drain current
TC=25°C
ID puls
200
Avalanche energy, single pulse
ID=50 A , VDD=25V, RGS=25Ω
EAS
240
mJ
Repetitive avalanche energy, limited by Tjmax2)
EAR
13.6
Reverse diode dv/dt
IS=50A, VDS=44V, di/dt=200A/µs, Tjmax=175°C
dv/dt
6
kV/µs
Gate source voltage
VGS
±20
V
Power dissipation
TC=25°C
Ptot
136
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56


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