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SPB10N10 Datasheet(PDF) 5 Page - Infineon Technologies AG |
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SPB10N10 Datasheet(HTML) 5 Page - Infineon Technologies AG |
5 / 8 page 2002-01-31 Page 5 Preliminary data SPI10N10 SPP10N10,SPB10N10 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 2 4 6 8 10 V 13 VDS 0 5 10 15 A 25 a b c d e f g h V GS[V]= a= 5 b= 5.5 c= 6 d= 6.5 e= 7 f= 8 g= 9 h= 10 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 5 10 15 20 25 A 35 ID 0 50 100 150 200 250 300 m 400 a b c d e f g h VGS[V]= a= 5 b= 5.5 c= 6 d= 6.5 e= 7 f= 8 g= 9 h= 10 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 5 V 7 VGS 0 2 4 6 8 A 12 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 1 2 3 4 5 6 7 8 A 10 ID 0 1 2 3 4 5 S 7 |
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