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SPI80N03S2L-04 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPI80N03S2L-04 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 2003-05-09 Page 1 SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 OptiMOS® Power-Transistor Product Summary V DS 30 V RDS(on) max. SMD version 3.9 m Ω I D 80 A Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated P- TO263 -3-2 P- TO262 -3-1 P- TO220 -3-1 Marking 2N03L04 2N03L04 2N03L04 Type Package Ordering Code SPP80N03S2L-04 P- TO220 -3-1 Q67042-S4113 SPB80N03S2L-04 P- TO263 -3-2 Q67042-S4112 SPI80N03S2L-04 P- TO262 -3-1 Q67042-S4114 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 1) TC=25°C I D 80 80 A Pulsed drain current TC=25°C I D puls 320 Avalanche energy, single pulse ID=80 A , VDD=25V, RGS=25Ω EAS 380 mJ Repetitive avalanche energy, limited by Tjmax2) EAR 18 Reverse diode dv/dt IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 188 W Operating and storage temperature T j , T stg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 |
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