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SPP80N03S2L-03 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SPP80N03S2L-03 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 2003-05-09 Page 3 SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=80A 93 185 - S Input capacitance Ciss VGS=0V, VDS =25V, f=1MHz - 6150 8180 pF Output capacitance Coss - 2400 3190 Reverse transfer capacitance Crss - 540 810 Gate resistance RG - 2.5 - Ω Turn-on delay time td(on) VDD=15V, VGS =10V, ID=40A, RG=1.1Ω - 11.8 17.7 ns Rise time tr - 34 51 Turn-off delay time td(off) - 99 148 Fall time tf - 90 135 Gate Charge Characteristics Gate to source charge Qgs VDD=24V, ID=80A - 19 26 nC Gate to drain charge Qgd - 57 86 Gate charge total Qg VDD=24V, ID=80A, VGS=0 to 10V - 166 220 Gate plateau voltage V(plateau) VDD = 24 V , ID=80A - 2.9 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 80 A Inv. diode direct current, pulsed ISM - - 320 Inverse diode forward voltage VSD VGS=0V, IF=80A - 1 1.3 V Reverse recovery time trr VR=15V, IF=lS, diF/dt=100A/µs - 65 80 ns Reverse recovery charge Qrr - 87 108 nC |
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