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SPN04N60C2 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPN04N60C2 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page 2002-07-29 Page 1 SPN04N60C2 Final data Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in SOT 223 • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity Product Summary VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 VPS05163 1 2 3 4 Type Package Ordering Code SPN04N60C2 SOT-223 Q67040-S4308 Marking 04N60C2 G,1 D,2/4 S,3 Maximum Ratings, at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA = 25 °C TA = 70 °C ID 0.8 0.65 A Pulsed drain current, tp limited by Tjmax ID puls 3 Reverse diode dv/dt IS=0.8A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C dv/dt 6 V/ns Gate source voltage VGS ±20 V Power dissipation, TA = 25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C |
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