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SPA04N50C3 Datasheet(PDF) 8 Page - Infineon Technologies AG |
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SPA04N50C3 Datasheet(HTML) 8 Page - Infineon Technologies AG |
8 / 13 page 2003-10-07 Page 8 SPP04N50C3, SPB04N50C3 SPA04N50C3 Final data 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD -1 10 0 10 1 10 2 10 A SPP04N50C3 T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) 14 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0 0.5 1 1.5 2 2.5 3 3.5 4 A 5 Tj(START)=25°C Tj(START)=125°C 15 Avalanche energy EAS = f (Tj) par.: ID = 3.4 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 0 20 40 60 80 100 120 mJ 160 16 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 450 460 470 480 490 500 510 520 530 540 550 560 570 V 600 SPP04N50C3 |
Similar Part No. - SPA04N50C3 |
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Similar Description - SPA04N50C3 |
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