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SPA04N80C3 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPA04N80C3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page 2003-07-02 Page 1 SPP04N80C3 SPA04N80C3 Final data Cool MOS™ Power Transistor VDS 800 V RDS(on) 1.3 Ω ID 4 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 P-TO220-3-1 P-TO220-3-31 1 2 3 Marking 04N80C3 04N80C3 Type Package Ordering Code SPP04N80C3 P-TO220-3-1 Q67040-S4433 SPA04N80C3 P-TO220-3-31 Q67040-S4434 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 4 2.5 41) 2.51) A Pulsed drain current, tp limited by Tjmax ID puls 12 12 A Avalanche energy, single pulse ID=0.8A, VDD=50V EAS 170 170 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=4A, VDD=50V EAR 0.1 0.1 Avalanche current, repetitive tAR limited by Tjmax IAR 4 4 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 63 38 W SPP Operating and storage temperature Tj , Tstg -55...+150 °C |
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