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SPA11N65C3 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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SPA11N65C3 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 14 page 2003-0 8-15 Page 7 SPP11N65C3, SPA11N65C3 SPI11N65C3 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Ω 2.1 SPP11N65C3 typ 98% 10 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 2 4 6 8 10 12 V 15 VGS 0 4 8 12 16 20 24 28 32 A 40 25°C 150°C 12 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD -1 10 0 10 1 10 2 10 A SPP11N65C3 T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) 11 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed 0 10 20 30 40 50 nC 70 QGate 0 2 4 6 8 10 12 V 16 SPP11N65C3 0,8 VDS max DS max V 0,2 |
Similar Part No. - SPA11N65C3 |
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Similar Description - SPA11N65C3 |
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