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SPA20N65C3 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPA20N65C3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 14 page 2003-0 8-15 Page 1 SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 P-TO220-3-31 1 2 3 Marking 20N65C3 20N65C3 20N65C3 Type Package Ordering Code SPP20N65C3 P-TO220-3-1 Q67040-S4556 SPA20N65C3 P-TO220-3-31 Q67040-S4555 SPI20N65C3 P-TO262-3-1 Q67040-S4560 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 20.7 13.1 20.71) 13.11) A Pulsed drain current, t p limited by Tjmax ID puls 62.1 62.1 A Avalanche energy, single pulse ID=3.5A, VDD=50V EAS 690 690 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=7A, VDD=50V EAR 1 1 Avalanche current, repetitive tAR limited by Tjmax IAR 7 7 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 208 34.5 W SPP_I Operating and storage temperature Tj , Tstg -55...+150 °C |
Similar Part No. - SPA20N65C3 |
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Similar Description - SPA20N65C3 |
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