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SPP80N08S2L-07 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # SPP80N08S2L-07
Description  OptiMOS Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPP80N08S2L-07 Datasheet(HTML) 1 Page - Infineon Technologies AG

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2003-05-09
Page 1
SPP80N08S2L-07
SPB80N08S2L-07
OptiMOS® Power-Transistor
Product Summary
VDS
75
V
RDS(on) max. SMD version
6.8
m
Ω
ID
80
A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO263 -3-2
P- TO220 -3-1
Marking
2N08L07
2N08L07
Type
Package
Ordering Code
SPP80N08S2L-07
P- TO220 -3-1
Q67060-S6015
SPB80N08S2L-07
P- TO263 -3-2
Q67060-S6016
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current 1)
TC=25°C
ID
80
80
A
Pulsed drain current
TC=25°C
ID puls
320
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
EAS
810
mJ
Repetitive avalanche energy, limited by Tjmax2)
EAR
30
Reverse diode dv/dt
IS=80A, VDS=60V, di/dt=200A/µs, Tjmax=175°C
dv/dt
6
kV/µs
Gate source voltage
VGS
±20
V
Power dissipation
TC=25°C
Ptot
300
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56


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