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SPW11N60C2 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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SPW11N60C2 Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 11 page 2002-10-07 Page 4 SPW11N60C2 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Inverse diode continuous forward current IS TC=25°C - - 11 A Inverse diode direct current, pulsed ISM - - 22 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF=IS , diF/dt=100A/µs - 650 1105 ns Reverse recovery charge Qrr - 7.9 - µC Peak reverse recovery current Irrm - 30 - A Peak rate of fall of reverse recovery current dirr/dt - 600 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.015 K/W Rth2 0.034 Rth3 0.042 Rth4 0.116 Rth5 0.149 Rth6 0.059 Thermal capacitance Cth1 0.0002121 Ws/K Cth2 0.0007091 Cth3 0.001184 Cth4 0.001527 Cth5 0.011 Cth6 0.089 E xternal H eatsink Tj Tcase Tamb C th1 C th2 R th1 R th,n C th,n P tot (t) |
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