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SPW11N80C3 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # SPW11N80C3
Description  Cool MOS Power Transistor
Download  11 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPW11N80C3 Datasheet(HTML) 1 Page - Infineon Technologies AG

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2003-07-03
Page 1
SPW11N80C3
Final data
Cool MOS™ Power Transistor
VDS
800
V
RDS(on)
0.45
Ω
ID
11
A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
P-TO247
Type
Package
Ordering Code
SPW11N80C3
P-TO247
Q67040-S4440
Marking
11N80C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
11
7.1
A
Pulsed drain current, t
p limited by Tjmax
ID puls
33
Avalanche energy, single pulse
ID = 2.2 A, VDD = 50 V
EAS
470
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID = 11 A, VDD = 50 V
EAR
0.2
Avalanche current, repetitive tAR limited by Tjmax IAR
11
A
Reverse diode dv/dt
IS=11A, VDS=480V, Tj=125°C
dv/dt
6
V/ns
Gate source voltage
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, TC = 25°C
Ptot
156
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C


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