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FA3E100BN Datasheet(PDF) 1 Page - Rohm |
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FA3E100BN Datasheet(HTML) 1 Page - Rohm |
1 / 12 page RQ3E100BN Nch 30V 10A Middle Power MOSFET Datasheet l lOutline VDSS 30V HSMT8 RDS(on)(Max.) 10.4mΩ ID ±10A PD 2W l lInner circuit l lFeatures 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. l lPackaging specifications Type Packing Embossed Tape Reel size (mm) 330 l lApplication Tape width (mm) 12 Switching Basic ordering unit (pcs) 3000 Taping code TB Marking E100BN l lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current ID ±10 A Pulsed drain current ID,pulse*1 ±40 A Gate - Source voltage VGSS ±20 V Power dissipation PD*2 2 W Junction temperature Tj 150 ℃ Range of storage temperature Tstg -55 to +150 ℃ www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/11 20141001 - Rev.001 |
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