NXP Semiconductors

PHPT61010NY

100 V, 10 A NPN high power bipolar transistor

PHPT61010NY

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Product data sheet

20 March 2015

4 / 16

aaa-015929

-75

225

125

25

4

2

6

8

(W)

0

(1)

(2)

(3)

(3) FR4 PCB, standard footprint

Fig. 1. Power derating curves

9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

-

-

100

K/W

[2]

-

-

41

K/W

thermal resistance

from junction to

ambient

in free air

[3]

-

-

30

K/W

thermal resistance

from junction to

mounting base

-

-

6

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.