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10-FY07NPA200SM02-L366F08 Datasheet(PDF) 5 Page - Vincotech

Part # 10-FY07NPA200SM02-L366F08
Description  Low inductive design with integrated DC capacitor
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Manufacturer  VINCOTECH [Vincotech]
Direct Link  http://www.vincotech.com
Logo VINCOTECH - Vincotech

10-FY07NPA200SM02-L366F08 Datasheet(HTML) 5 Page - Vincotech

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10-FY07NPA200SM02-L366F08
10-PY07NPA200SM02-L366F08Y
datasheet
Copyright Vincotech
5
16 Nov. 2015 / Revision 3
Out. Boost Switch
25
76
125
62
25
12
125
14
25
153
125
171
25
7
125
12
Q rFWD = 4,5 µC
25
1,709
Q rFWD = 9,2 µC
125
2,573
25
0,542
125
1,009
t d(off)
Fall time
t f
Turn-on energy (per pulse)
E on
mWs
Turn-off energy (per pulse)
E off
120
ns
Rise time
t r
R gon = 4 Ω
Turn-off delay time
Turn-on delay time
t d(on)
R goff = 4 Ω
±15
350
IGBT Switching
25
3,2
4
4,8
125
25
1,69
2,1
125
1,86
150
1,96
25
200
125
25
200
125
0,65
K/W
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material
ʎ
=3,4W /mK
200
25
420
nC
Reverse transfer capac itance
C res
42
Gate c harge
Q g
15
520
25
13120
pF
Output capacitance
C oes
194
none
Ω
Input capacitance
C ies
f=1 MHz
0
25
Internal gate resistance
r g
µA
Gate- emitter leakage c urrent
I GES
20
0
nA
Collec tor- emitter c ut-off current
I CES
0
650
Static
V GE [V] V CE [V]
I C [A]
V
Collec tor- emitter saturation voltage
V CEsat
15
200
V
Gate- emitter threshold voltage
V GE(th)
V GE=V CE
0,002
Parameter
Symbol
Conditions
Value
Unit
T j[ °C]
Min
Typ
Max


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