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10-FZ06NRA041FS03-P965F78 Datasheet(PDF) 4 Page - Vincotech |
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10-FZ06NRA041FS03-P965F78 Datasheet(HTML) 4 Page - Vincotech |
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4 / 28 page  10-FZ06NRA041FS03-P965F78 10-PZ06NRA041FS03-P965F78Y Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 1,25 1,88 1,95 Tj=125°C 1,22 Tj=25°C 1,37 Tj=125°C 0,70 Tj=25°C 0,05 Tj=125°C 0,05 Tj=25°C 0,027 Tj=125°C Thermal resistance chip to heatsink per chip RthJH 2,17 K/W Tj=25°C 2,28 2,8 Tj=125°C 1,76 Tj=25°C 100 Tj=125°C Tj=25°C 58 Tj=125°C 75 Tj=25°C 14 Tj=125°C 24 Tj=25°C 0,38 Tj=125°C 0,95 di(rec)max Tj=25°C 17148 /dt Tj=125°C 12194 Tj=25°C 0,06 Tj=125°C 0,14 Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness≤50um λ = 1 W/mK 1,74 K/W Tj=25°C 41 Tj=125°C 82 Tj=25°C 2,4 3 3,6 Tj=125°C Tj=25°C 100 Tj=125°C Tj=25°C 5000 Tj=125°C Tj=25°C 23 Tj=125°C 22 Tj=25°C 5 Tj=125°C 6 Tj=25°C 123 Tj=125°C 134 Tj=25°C 5 Tj=125°C 7 Tj=25°C 0,15 Tj=125°C 0,28 Tj=25°C 0,05 Tj=125°C 0,07 30 30 0,00296 30 Tj=25°C 600 350 44,4 30 350 600 VDS=VGS 20 10 10 10 100 480 0 10 Rgoff=2 Thermal grease thickness≤50um λ = 1 W/mK Rgon=2 f=1MHz Qg td(ON) Rds(on) Ciss Qgs Qrr trr VF rG V(GS)th Igss tr td(OFF) IRRM Eon Qgd Reverse recovered charge Turn-off energy loss per pulse Input capacitance Erec Diode forward voltage Buck Diode Peak reverse recovery current Reverse recovery time Reverse recovered energy Peak rate of fall of recovery current Gate to source charge Gate threshold voltage Eoff RthJH tf Turn-on energy loss per pulse Fall time Static drain to source ON resistance Buck MOSFET Ir Characteristic Values Forward voltage Threshold voltage (for power loss calc. only) Slope resistance (for power loss calc. only) VF Vt0 rt Value Conditions Boost Inv. Diode 10 10 10 600 V V mA Reverse current Thermal grease thickness≤50um λ = 1 W/mK A/µs ns A V mWs uA V nC nA 6530 150 0,7 0 0 Rgon=2 Total gate charge Gate to Source Leakage Current Turn On Delay Time Rise Time Zero Gate Voltage Drain Current Idss Output capacitance Turn off delay time Coss Gate to drain charge Gate resistor Thermal resistance chip to heatsink per chip Tj=25°C 0,90 36 360 K/W µC m ns mWs µA Reverse leakage current Ir pF 290 copyright Vincotech 4 Revision: 4 |
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