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10-FZ06NRA084FP02-P969F78 Datasheet(PDF) 8 Page - Vincotech

Part # 10-FZ06NRA084FP02-P969F78
Description  75A parallel switch (75A and 99m MOSFET)
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Manufacturer  VINCOTECH [Vincotech]
Direct Link  http://www.vincotech.com
Logo VINCOTECH - Vincotech

10-FZ06NRA084FP02-P969F78 Datasheet(HTML) 8 Page - Vincotech

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10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
Figure 5
MOSFET+IGBT
Figure 6
MOSFET+IGBT
Typical switching energy losses
Typical switching energy losses
as a function of collector current
as a function of gate resistor
E = f(IC)
E = f(RG)
With an inductive load at
With an inductive load at
Tj =
25/125
°C
Gate on/off resistor of IGBT is fix 4
Tj =
25/125
°C
Gate on/off resistor of IGBT is fix 4
VCE =
350
V
MOSFET turn off delayed with 350 nS
VCE =
350
V
MOSFET turn off delayed with 350 nS
VGE =
±15
V
VGE =
±15
V
Rgon =
4
IC =
40
A
Rgoff =
4
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
Typical reverse recovery energy loss
as a function of collector current
as a function of gate resistor
Erec = f(Ic)
Erec = f(RG)
With an inductive load at
With an inductive load at
Tj =
25/125
°C
Gate on/off resistor of IGBT is fix 4
Tj =
25/125
°C
Gate on/off resistor of IGBT is fix 4
VCE =
350
V
MOSFET turn off delayed with 350 nS
VCE =
350
V
MOSFET turn off delayed with 350 nS
VGE =
±15
V
VGE =
±15
V
Rgon =
4
IC =
40
A
Buck
Eon High T
Eoff High T
Eon Low T
Eoff Low T
0,0
0,2
0,4
0,6
0,8
0
20
40
60
80
I C (A)
Eoff High T
Eon High T
Eon Low T
Eoff Low T
0,0
0,1
0,2
0,3
0,4
0,5
0,6
0
20
40
60
80
R G ( Ω
Ω
Ω
Ω )
Erec High T
Erec Low T
0,00
0,05
0,10
0,15
0,20
0,25
0
20
40
60
80
I C (A)
Erec High T
Erec Low T
0,00
0,05
0,10
0,15
0,20
0
20
40
60
80
R G ( Ω
Ω
Ω
Ω )
25/125
25/125
25/125
25/125
copyright Vincotech
8
Revision: 1


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