10-FZ07B2A030SM02-M575L48

datasheet

Copyright Vincotech

10

25 Jun. 2015 / Revision 1

Boost Switching Characteristics

Figure 5.

IGBT

Figure 6.

IGBT

Typical swit ching t imes as a f unct ion of collector current

Typical swit ching t imes as a f unct ion of gate resistor

With an induc tive load at

With an inductive load at

125

°C

125

°C

400

V

400

V

15/0

V

15/0

V

16

30

A

16

Figure 7.

FWD

Figure 8.

FWD

Typical reverse recovery t ime as a f unction of collector current

Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or

At

400

V

At

400

V

=

15/0

V

125 °C

15/0

V

125 °C

16

30

A

0,001

0,01

0,1

1

0

10

20

30

40

50

60

(A

(A

(A))))

0,001

0,01

0,1

1

0

16

32

48

64

80

Ω)

Ω)

Ω)

0

0,04

0,08

0,12

0,16

0

16

32

48

64

80

R

R

R

g on

g on

(((Ω)

Ω)

Ω)

Ω)

0

0,03

0,06

0,09

0,12

0

10

20

30

40

50

60

(A)

(A)

(A)