PMEG4010AESB datasheet(1/14 Pages) NXP

Part #	PMEG4010AESB

Description	40 V, 1 A low VF MEGA Schottky barrier rectifier

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Manufacturer	NXP [NXP Semiconductors]

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PMEG4010AESB

40 V, 1 A low VF MEGA Schottky barrier rectifier

6 October 2015

Product data sheet

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1. General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an

integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)

Surface-Mounted Device (SMD) package.

2. Features and benefits

• Average forward current: IF(AV) ≤ 1 A

• Reverse voltage: VR ≤ 40 V

• Low forward voltage, typical: VF = 435 mV

• Low reverse current, typical: IR = 325 µA

• Package height typ. 270 µm

3. Applications

• Low voltage rectification

• High efficiency DC-to-DC conversion

• Switch mode power supply

• Low power consumption applications

• Ultra high-speed switching

• LED backlight for mobile application

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF(AV)

average forward

current

δ = 0.5 ; f = 20 kHz; Tsp ≤ 145 °C;

square wave

-

1

A

VR

reverse voltage

Tj = 25 °C

-

40

V

VF

forward voltage

IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;

Tj = 25 °C

-

435

505

mV

VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3 ;

Tj = 25 °C

-

30

115

µA

IR

reverse current

VR = 40 V; tp ≤ 3 ms; δ ≤ 0.3 ;

Tj = 25 °C

-

325

1250

µA

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