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10-PZ12NMA040SH-M267FY Datasheet(PDF) 7 Page - Vincotech |
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10-PZ12NMA040SH-M267FY Datasheet(HTML) 7 Page - Vincotech |
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7 / 27 page  10-FZ12NMA040SH-M267F/ 10-PZ12NMA040SH-M267FY datasheet Figure 9 IGBT Figure 10 IGBT Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(IC) t = f(RG) With an inductive load at With an inductive load at Tj = 125 °C Tj = 125 °C VCE = 350 V VCE = 350 V VGE = ±15 V VGE = ±15 V Rgon = 8 IC = 28 A Rgoff = 8 Figure 11 FWD Figure 12 FWD Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of IGBT turn on gate resistor trr = f(Ic) trr = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VR = 350 V VGE = ±15 V IF = 28 A Rgon = 8 VGE = ±15 V Half Bridge Half Bridge IGBT and Neutral Point FWD tdoff tf tdon tr 0,00 0,01 0,10 1,00 0 15 30 45 60 I C (A) trr High T trr Low T 0,00 0,02 0,04 0,06 0,08 0,10 0 10 20 30 40 R gon ( ) tdoff tf tdon tr 0,00 0,01 0,10 1,00 0 10 20 30 40 R G ( ) trr High T trr Low T 0,00 0,01 0,02 0,03 0,04 0,05 0 15 30 45 60 I C (A) copyright Vincotech 7 Revision: 6 |
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