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10-FZ062PA075SA-P993F08 Datasheet(PDF) 3 Page - Vincotech |
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10-FZ062PA075SA-P993F08 Datasheet(HTML) 3 Page - Vincotech |
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3 / 15 page  FZ06 / F0062PA075SA preliminary datasheet Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 5 5,8 6,5 Tj=150°C Tj=25°C 1 1,63 2,1 Tj=150°C 1,87 Tj=25°C 0,03 Tj=150°C Tj=25°C 700 Tj=150°C Tj=25°C 123 Tj=150°C 132 Tj=25°C 15 Tj=150°C 21 Tj=25°C 169 Tj=150°C 199 Tj=25°C 87 Tj=150°C 105 Tj=25°C 0,52 Tj=150°C 0,89 Tj=25°C 1,68 Tj=150°C 2,26 Thermal resistance chip to heatsink per chip RthJH 0,92 Thermal resistance chip to case per chip RthJC Tj=25°C 1 1,64 2,1 Tj=150°C 1,59 Tj=25°C 93,621 Tj=150°C 110,6 Tj=25°C 100,9 Tj=150°C 128,2 Tj=25°C 3,24 Tj=150°C 6,5 di(rec)max Tj=25°C 6615 /dt Tj=150°C 4122 Tj=25°C 0,75 Tj=150°C 1,57 Thermal resistance chip to heatsink per chip RthJH 1,37 Thermal resistance chip to case per chip RthJC K/W Thermal grease thickness ≤50um λ = 1 W/mK K/W Thermal grease thickness ≤50um λ = 1 W/mK V pF mWs Ω ns ns mA 465 4700 300 145 Rgon=2 Ω 0,0012 50 300 25 0 300 75 Gate-emitter leakage current Integrated Gate resistor Inverter Transistor Gate emitter threshold voltage Fall time Turn-off delay time Turn-on delay time Rise time Gate charge Reverse recovery time Reverse recovered energy Peak rate of fall of recovery current Reverse recovered charge Inverter Diode Diode forward voltage 75 75 VCE=VGE ±15 f=1MHz Rgoff=2 Ω ±15 Rgon=2 Ω 0 A μC mWs A/ μs Characteristic Values Value Conditions Input capacitance Output capacitance Turn-off energy loss per pulse Collector-emitter saturation voltage Turn-on energy loss per pulse Collector-emitter cut-off current incl. Diode Erec Coss Rgint tf Eon Eoff IRRM td(on) Crss IGES VGE(th) VCE(sat) ICES Cies Qrr trr VF Peak reverse recovery current Reverse transfer capacitance QGate tr td(off) 0 ±15 20 15 600 V nC V nA Tj=25°C 4 Tj=25°C 3 Revision: 1 Copyright by Vincotech |
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