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10-F0062TA030FB-P983D19 Datasheet(PDF) 3 Page - Vincotech |
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10-F0062TA030FB-P983D19 Datasheet(HTML) 3 Page - Vincotech |
3 / 20 page 10-FZ062TA030(FB/FB01/FB02/FB03)-P983(D18/D28/D38/D48) 10-F0062TA030(FB/FB03)-P983(D19/D49) preliminary datasheet Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 1,16 1,4 Tj=125°C 1,11 Tj=25°C 0,9 Tj=125°C 0,77 Tj=25°C 9 Tj=125°C 12 Tj=25°C 0,02 Tj=150°C 2 Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ =1 W/mK 1,72 K/W Tj=25°C 1,25 1,6 Tj=125°C 1,22 Tj=25°C 0,93 Tj=125°C 0,82 Tj=25°C 0,011 Tj=125°C 0,014 Tj=25°C 0,05 Tj=125°C 2 Ig=0,5A Tj=25°C 2 dig/dt=0,5A/us Ig=0,2A Tj=25°C <1 dig/dt=0,2A/us Tj=125°C 500 Ig=0,2A Tj=125°C 150 f=50Hz VD=2/3Vdrm Tj=125°C 150 tp=200us VD=6V Tj=25°C 50 tp=10us Tj=25°C 90 Ig=0,2A VD=6V Tj=25°C 1,3 Tj=-40°C 1,6 VD=6V Tj=25°C 11 28 Tj=-40°C 50 Tj=125°C 0,2 Tj=125°C 1 Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ = 1 W/mK 1,57 K/W Tj=25°C 3 4 5 Tj=125°C Tj=25°C 2,89 3,3 Tj=125°C 3,43 Tj=25°C 30 Tj=125°C 3,43 Tj=25°C 0,2 Tj=125°C Tj=25°C 15,8 Tj=125°C 15,4 Tj=25°C 6,4 Tj=125°C 7,4 Tj=25°C 107,6 Tj=125°C 120,4 Tj=25°C 4,2 Tj=125°C 6,6 Tj=25°C 0,2197 Tj=125°C 0,4012 Tj=25°C 0,1983 Tj=125°C 0,3086 Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ = 1 W/mK 1,22 K/W mA mA A/µs µs µs V/µs mA µs V nC mWs pF V mA mA V nA ns 1500 92 150 92 n.a. VD=1/2Vdrm 40 VD=1/2Vdrm VD=2/3Vdrm 100 VD=2/3Vdrm 800 Tj=25°C Vce 20 15 400 25 IH tq 26 mA V 15 0 0 VD=1/2Vdrm Threshold voltage (for power loss calc. only) Vto Gate non-trigger voltage Gate trigger current Gate controlled delay time V m 30 tGD VGD IGT Critical rate of rise of on-state current 30 V 30 Reverse current Input Rectifier Thyristor Forward voltage VF Ir 1500 V V m mA 30 30 30 Characteristic Values Forward voltage Threshold voltage (for power loss calc. only) Slope resistance (for power loss calc. only) VF Vto rt Input Rectifier Diode Value Conditions IL Critical rate of rise of off-state voltage (di/dt)cr rt Ir (dv/dt)cr tGR Slope resistance (for power loss calc. only) Gate non-trigger current Gate controlled rise time Circuit commutated turn-off time Latching current Reverse current Holding current VGT Gate trigger voltage Input capacitance Output capacitance Reverse transfer capacitance Gate charge Cies tr tf Eoff Collector-emitter cut-off Rise time Turn-on delay time Gate emitter threshold voltage Gate-emitter leakage current f=1MHz QGate Crss Coss VCE(sat) IGES ICES VGE(th) Integrated Gate resistor Rgon=2 Turn-off energy loss per pulse Rgint Turn-off delay time Eon td(off) Turn-on energy loss per pulse Fall time td(on) Collector-emitter saturation voltage PFC IGBT IGD Rgoff=2 30 600 18 0 480 0,0005 30 Tj=25°C 3 Revision: 3 Copyright by Vincotech |
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