10-F0062TA030FB-P983D19 datasheet(3/20 Pages) VINCOTECH

Part #	10-F0062TA030FB-P983D19

Description	Vincotech clip-in housing

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Manufacturer	VINCOTECH [Vincotech]

Direct Link	http://www.vincotech.com

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10-FZ062TA030(FB/FB01/FB02/FB03)-P983(D18/D28/D38/D48)

10-F0062TA030(FB/FB03)-P983(D19/D49)

preliminary datasheet

Parameter

Symbol

Unit

VGE [V] or

VGS [V]

Vr [V]

or

VCE [V] or

VDS [V]

IC [A] or

IF [A] or

ID [A]

Tj

Min

Typ

Max

Tj=25°C

1,16

1,4

Tj=125°C

1,11

Tj=25°C

0,9

Tj=125°C

0,77

Tj=25°C

9

Tj=125°C

12

Tj=25°C

0,02

Tj=150°C

2

Thermal resistance chip to heatsink per chip

RthJH

Thermal grease

thickness

≤50um

λ =1 W/mK

1,72

K/W

Tj=25°C

1,25

1,6

Tj=125°C

1,22

Tj=25°C

0,93

Tj=125°C

0,82

Tj=25°C

0,011

Tj=125°C

0,014

Tj=25°C

0,05

Tj=125°C

2

Ig=0,5A

Tj=25°C

2

dig/dt=0,5A/us

Ig=0,2A

Tj=25°C

<1

dig/dt=0,2A/us

Tj=125°C

500

Ig=0,2A

Tj=125°C

150

f=50Hz

VD=2/3Vdrm

Tj=125°C

150

tp=200us

VD=6V

Tj=25°C

50

tp=10us

Tj=25°C

90

Ig=0,2A

VD=6V

Tj=25°C

1,3

Tj=-40°C

1,6

VD=6V

Tj=25°C

11

28

Tj=-40°C

50

Tj=125°C

0,2

Tj=125°C

1

Thermal resistance chip to heatsink per chip

RthJH

Thermal grease

thickness

≤50um

λ = 1 W/mK

1,57

K/W

Tj=25°C

3

4

5

Tj=125°C

Tj=25°C

2,89

3,3

Tj=125°C

3,43

Tj=25°C

30

Tj=125°C

3,43

Tj=25°C

0,2

Tj=125°C

Tj=25°C

15,8

Tj=125°C

15,4

Tj=25°C

6,4

Tj=125°C

7,4

Tj=25°C

107,6

Tj=125°C

120,4

Tj=25°C

4,2

Tj=125°C

6,6

Tj=25°C

0,2197

Tj=125°C

0,4012

Tj=25°C

0,1983

Tj=125°C

0,3086

Thermal resistance chip to heatsink per chip

RthJH

Thermal grease

thickness

≤50um

λ = 1 W/mK

1,22

K/W

mA

A/µs

µs

V/µs

mA

µs

V

nC

mWs

pF

V

mA

V

nA

ns

1500

92

150

92

n.a.

VD=1/2Vdrm

40

VD=1/2Vdrm

VD=2/3Vdrm

100

VD=2/3Vdrm

800

Tj=25°C

Vce

20

15

400

25

IH

tq

26

mA

V

15

0

VD=1/2Vdrm

Threshold voltage (for power loss calc. only)

Vto

Gate non-trigger voltage

Gate trigger current

Gate controlled delay time

V

m

30

tGD

VGD

IGT

Critical rate of rise of on-state current

30

V

30

Reverse current

Input Rectifier Thyristor

Forward voltage

VF

Ir

1500

V

m

mA

30

Characteristic Values

Forward voltage

Threshold voltage (for power loss calc. only)

Slope resistance (for power loss calc. only)

VF

Vto

rt

Input Rectifier Diode

Value

Conditions

IL

Critical rate of rise of off-state voltage

(di/dt)cr

rt

Ir

(dv/dt)cr

tGR

Slope resistance (for power loss calc. only)

Gate non-trigger current

Gate controlled rise time

Circuit commutated turn-off time

Latching current

Reverse current

Holding current

VGT

Gate trigger voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

Cies

tr

tf

Eoff

Collector-emitter cut-off

Rise time

Turn-on delay time

Gate emitter threshold voltage

Gate-emitter leakage current

f=1MHz

QGate

Crss

Coss

VCE(sat)

IGES

ICES

VGE(th)

Integrated Gate resistor

Rgon=2

Turn-off energy loss per pulse

Rgint

Turn-off delay time

Eon

td(off)

Turn-on energy loss per pulse

Fall time

td(on)

Collector-emitter saturation voltage

PFC IGBT

IGD

Rgoff=2

30

600

18

0

480

0,0005

30

Tj=25°C

3

Revision:

3

Copyright by Vincotech

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