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BSS123W Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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BSS123W Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page © 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com BSS123W Rev. 1.0 December 2015 BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor Features • 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V • High Density Cell Design for Low RDS(ON) • Rugged and Reliable • Ultra Small Surface Mount Package • Very Low Capacitance • Fast Switching Speed • Lead Free / RoHS Compliant Ordering Information Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Part Number Marking Package Packing Method BSS123W SA SOT-323 3L Tape and Reel Symbol Parameter Value Unit VDSS Drain-Source Voltage 100 V VDGR Drain-Gate Voltage RGS ≤ 20 kΩ 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current Continuous 0.17 A Pulsed 0.68 TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C D S G G S SOT-323 D Description This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching perfor- mance. This product is particularly suited for low-voltage, low-current applications such as small servo motor con- trol, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power sup- ply and switching applications. |
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