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BSS123W Rev. 1.0

December 2015

BSS123W

N-Channel Logic Level Enhancement Mode Field Effect

Transistor

Features

• Rugged and Reliable

• Ultra Small Surface Mount Package

• Very Low Capacitance

• Fast Switching Speed

• Lead Free / RoHS Compliant

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Part Number

Marking

Package

Packing Method

BSS123W

SA

SOT-323 3L

Tape and Reel

Symbol

Parameter

Value

Unit

Drain-Source Voltage

100

V

100

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

0.17

A

Pulsed

0.68

Operating and Storage Temperature Range

-55 to +150

°C

D

S

G

G

S

SOT-323

D

Description

This N-channel enhancement mode field effect transistor

is produced using high cell density, trench MOSFET

technology. This product minimizes on-state resistance

while providing rugged, reliable and fast switching perfor-

mance. This product is particularly suited for low-voltage,

low-current applications such as small servo motor con-

trol, power MOSFET gate drivers, logic level transistor,

high speed line drivers, power management/power sup-

ply and switching applications.